Directional phonon-assisted cascading of photoexcited carriers in stepped InX(Al0.17Ga0.83)1-XAs/ Al0.17Ga0.83As multiple quantum wells

Stokes and anti-Stokes photoluminescence towards five different Inx(Al0.17Ga0.83)1 xAs/Al0.17Ga0.83As quantum wells

Phonon emission by photoexcited carriers in InGaN/GaN multiple quantum wells

The effect of well width on both the photoluminescence (PL) and phonon emission in optically excited InGaN multiple quantum well (MQW) samples has been investigated. For narrow MQW samples (w < 2.5 nm), the lowtemperature PL quantum efficiency is close to unity with the phonon emission being due mainly to carrier relaxation in the QWs. For wider MQWs samples the PL quantum efficiency is reduced...

Theory of carrier dynamics and time resolved reflectivity in InxMn1−xAs/GaSb heterostructures

We present detailed theoretical calculations of two color, time-resolved pump-probe differential reflectivity measurements. The experiments modeled were performed on InxMn1−xAs/GaSb heterostructures and have shown pronounced oscillations in the differential reflectivity as well as a time-dependent background signal. Previously, we showed that the oscillations resulted from a generation of coher...

Auger Recombination in Semiconductor Quantum Wells

The principal mechanisms of Auger recombination of nonequilibrium carriers in semiconductor heterostructures with quantum wells are investigated. It is shown for the first time that there exist three fundamentally different Auger recombination mechanisms of (i) thresholdless, (ii) quasi-threshold, and (iii) threshold types. The rate of the thresholdless Auger process depends on temperature only...

Well-width dependence of exciton-phonon scattering in InxGa1 - xAs/GaAs single quantum wells